4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy . by this way , the crystal quality and emission characteristic of zno thin films can be improved , which provide a way to resolve the native oxide layer of si substrate 4 、通過(guò)用等離子體對(duì)硅襯底表面進(jìn)行清洗和鈍化兩步處理,解決硅襯底表面的氧化層和界面電荷平衡問(wèn)題,制備出了高質(zhì)量的氧化鋅薄膜材料,找到了一條獲得了高質(zhì)量的氧化鋅薄膜的新途徑。
In order to otain high quality zno thin films , we , for the first time , employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures . the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail . to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic , we obtain high qulaity p - zno by a easy way of thermal zn3n2 為了在低溫下制備高質(zhì)量的氧化鋅薄膜,我們采用金屬有機(jī)源和二氧化碳?xì)庠?,首次利用等離子體增強(qiáng)化學(xué)氣相沉積的技術(shù)在低溫下制備了高質(zhì)量的氧化鋅薄膜,系統(tǒng)地研究了生長(zhǎng)條件以及襯底表面氧化層對(duì)薄膜質(zhì)量的影響,確定了生長(zhǎng)高質(zhì)量氧化鋅薄膜的優(yōu)化條件;為獲得p - zno材料,克服在zno中摻n雜質(zhì)間相互作用影響摻雜效率不易獲得p - zno的困難,我們通過(guò)熱氧化zn3n2的方法制備了p - zno ,獲得了一系列研究結(jié)果: 1 、詳細(xì)研究了氣體流速比,襯底溫度和射頻功率實(shí)驗(yàn)參數(shù)對(duì)氧化鋅薄膜特性的影響。